Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors-Reference-Cited by-同舟云学术

Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

Published:2016 Issue:108 Volume:6 Page:106374-106379
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Po-Tsun¹²³⁴^ORCID,Chang Chih-Hsiang¹²³⁴,Fuh Chur-Shyang⁵²³⁴

Affiliation:

1. Department of Photonics and Institute of Electro-Optical Engineering

2. National Chiao Tung University

3. Hsinchu 30010

4. Taiwan

5. Department of Electronics Engineering and Institute of Electronics

Abstract

The influence of a backchannel passivation layer on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors was studied. The ALD Al₂O₃ films and plasma-enhanced chemical vapor deposited SiO₂ films were separately used as channel passivation layers.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA22423G

Reference16 articles.

1. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

2. Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs

3. Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor