Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED-Reference-Cited by-同舟云学术

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Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED

Published:2012-06 Issue:6 Volume:59 Page:1701-1708
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Chang-Yu,Chien Chih-Wei,Wu Cheng-Han,Hsieh Hsing-Hung,Wu Chung-Chih,Yeh Yung-Hui,Cheng Chun-Cheng,Lai Chih-Ming,Yu Ming-Jiue

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6200907/06179520.pdf?arnumber=6179520

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors;Journal of Applied Physics;2024-08-16

2. Solution processed rare-earth doped high-k dielectrics for low-power IGZO transistors;Journal of Alloys and Compounds;2023-08

3. High Vth Compensation Range AMOLED Pixel Circuit Based on A Dual Gate a-IGZO TFT and A Specially Amplified Capacitor;2023 6th International Conference on Electronics Technology (ICET);2023-05-12

4. Oxide Circuits for Flexible Electronics;Amorphous Oxide Semiconductors;2022-05-20

5. The Significance on Structural Modulation of Buffer and Gate Insulator for ALD Based InGaZnO TFT Applications;IEEE Transactions on Electron Devices;2021-12

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