Solution processed rare-earth doped high-k dielectrics for low-power IGZO transistors
Author:
Funder
Basic and Applied Basic Research Foundation of Guangdong Province
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
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1. Characteristics of the incorporation of Yb defect states in CuO:ZnO nanocomposite;Ceramics International;2024-08
2. Exploring the Potential of Rare Earth Doped Carbon Dots: Concepts and Applications;Chemical Engineering Journal Advances;2024-03
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