Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer

Author:

Xiao Zhenyuan12ORCID,Jin Jidong1ORCID,Lee Jeongho1ORCID,Choi Gisang1,Lin Xiaoyu3,Zhang Jiawei3ORCID,Kim Jaekyun12ORCID

Affiliation:

1. Department of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of Korea

2. BK21 FOUR ERICA-ACE Center Hanyang University Ansan 15588 Republic of Korea

3. Shandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 China

Abstract

Herein, the effects of oxygen‐compensated capping layer (CCL) on the electrical performance and stability of indium‐tin‐zinc‐oxide (ITZO) thin‐film transistors (TFTs) are investigated. Two different channel structures, namely, single and dual channels, are tested for the ITZO TFTs. The dual‐channel layer is created by depositing an oxygen CCL on the oxygen‐uncompensated channel layer (UCL), while the single‐channel layer consists only of the oxygen UCL. It is found that the oxygen CCL is critical for enhancing the electrical properties of dual‐channel ITZO TFT and its stability under different stress modes such as dynamic stress, positive bias temperature stress, and negative bias illumination stress. The dual‐channel ITZO TFT exhibits a saturation field‐effect mobility of 16.69 cm2 V−1s−1, a threshold voltage of 6.80 V, and a subthreshold swing of 0.22 V dec−1. Furthermore, it is revealed that the higher metal‐oxide concentration and fewer defects in the dual channel lead to enhanced electrical performance and stability of the device. This work demonstrates the potential of utilizing the oxygen CCL for the highly reliable operation of oxide semiconductor TFTs.

Funder

Key Technology Research and Development Program of Shandong

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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