Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor-Reference-Cited by-同舟云学术

Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor

Published:2010-03-23 Issue:3 Volume:49 Page:03CB04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Godo Hiromichi,Kawae Daisuke,Yoshitomi Shuhei,Sasaki Toshinari,Ito Shunichi,Ohara Hiroki,Kishida Hideyuki,Takahashi Masahiro,Miyanaga Akiharu,Yamazaki Shunpei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. 42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs

3. 68.3:Invited Paper: Transparent Amorphous Oxide Semiconductors for High Performance TFT

4. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

5. 42.4L: Late-News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga[sub 2]O[sub 3]-In[sub 2]O[sub 3]-ZnO) TFT

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