A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization-Reference-Cited by-同舟云学术

A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization

Published:2023-03 Issue:3 Volume:44 Page:412-415
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Xu Lihua¹,Guo Jingrui²^ORCID,Sun Chen³,Zheng Zijie³^ORCID,Xu Yannan²^ORCID,Huang Shijie²^ORCID,Han Kaizhen³^ORCID,Wei Wei²,Guo Zean²,Gong Xiao³^ORCID,Luo Qing²^ORCID,Wang Lingfei²^ORCID,Li Ling²^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China, Hefei, China

2. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

3. Department of Electrical and Computer Engineering, National University of Singapore (NUS), Queenstown, Singapore

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Singapore Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10005073.pdf?arnumber=10005073

Reference21 articles.

1. Percolation description of charge transport in amorphous oxide semiconductors

2. Hopping transport through defect-induced localized states in molybdenum disulphide

3. Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor

4. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

5. Temperature-Dependent Field Cycling Behavior of Ferroelectric Hafnium Zirconium Oxide (HZO) MFM Capacitors

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