Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3589371
Reference19 articles.
1. Thin-film transistors with amorphous indium gallium oxide channel layers
2. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
3. Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
4. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
5. Disorder and instability processes in amorphous conducting oxides
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