Thin-film transistors with amorphous indium gallium oxide channel layers-Reference-Cited by-同舟云学术

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Thin-film transistors with amorphous indium gallium oxide channel layers

Published:2006 Issue:6 Volume:24 Page:2702
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chiang H. Q.,Hong D.,Hung C. M.,Presley R. E.,Wager John F.,Park C.-H,Keszler D. A.,Herman G. S.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors;Small;2024-07-25

2. Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films;European Journal of Inorganic Chemistry;2021-06-15

3. Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor;ACS Applied Materials & Interfaces;2021-06-11

4. Importance of Local Bond Order to Conduction in Amorphous, Transparent, Conducting Oxides: The Case of Amorphous ZnSnOy;ACS Applied Materials & Interfaces;2019-10-22

5. Processing, Structure, and Transistor Performance: Combustion versus Pulsed Laser Growth of Amorphous Oxides;ACS Applied Electronic Materials;2019-03-22

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