A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors-Reference-Cited by-同舟云学术

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A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

Published:2024-07 Issue:7 Volume:71 Page:4397-4402
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liang Fu-Xiang¹^ORCID,Kumar Shubham²,Ni Kai¹^ORCID,Chakraborty Wriddhi¹^ORCID,Singh Chauhan Yogesh³^ORCID,Amrouch Hussam⁴^ORCID,Datta Suman⁵^ORCID,Niemier Michael⁶^ORCID,Sharon Hu Xiaobo⁶^ORCID

Affiliation:

1. Department of EE, UND, Notre Dame, IN, USA

2. Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany

3. IIT Kanpur, Kanpur, India

4. Munich Institute of Robotics and Machine Intelligence (MIRMI), Chair of AI Processor Design, Technical University of Munich (TUM), Munich, Germany

5. School of ECE, GaTech, Atlanta, GA, USA

6. Department of CSE, UND, Notre Dame, IN, USA

Funder

NSF

emiconductor Research Corporation (SRC) LMD program

InnoHK ACCESS Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10566499/10552774-aam.pdf

Reference28 articles.

1. In-Memory Computing with Associative Memories: A Cross-Layer Perspective

2. Neuro-Inspired Computing With Emerging Nonvolatile Memorys

3. Progress and Benchmark of Spiking Neuron Devices and Circuits

4. Monolithic 3D Integration of High Endurance Multi-Bit Ferroelectric FET for Accelerating Compute-In-Memory

5. Logic Compatible High-Performance Ferroelectric Transistor Memory

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