42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs
Author:
Publisher
Wiley
Reference36 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
3. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations
4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
5. M. Ito, et al., Proc. 12th IDW/AD, 845 (2005);
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