Anode hole injection and trapping in silicon dioxide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362821
Reference59 articles.
1. Model for the generation of positive charge at the Si-SiO2interface based on hot-hole injection from the anode
2. The effect of gate metal and SiO2thickness on the generation of donor states at the Si‐SiO2interface
3. The relation between positive charge and breakdown in metal‐oxide‐silicon structures
4. Threshold energies of high‐field‐induced hole currents and positive charges in SiO2layers of metal‐oxide‐semiconductor structures
5. Investigation of the SiO2‐induced substrate current in silicon field‐effect transistors
Cited by 173 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies;IEEE Transactions on Electron Devices;2023-04
2. Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current Characteristics;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress;IEEE Transactions on Electron Devices;2023
4. Programmable set to monitor charge state change of MIS devices under high-fields;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09
5. Technique of Control of the Gate Dielectric of MIS Structures Based on High-Field Charge Injection;Inorganic Materials: Applied Research;2022-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3