Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies
Author:
Affiliation:
1. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan
2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Funder
U.S. Department of Commerce
National Science and Technology Council of Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10057964.pdf?arnumber=10057964
Reference28 articles.
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5. Limitations of the High–Low $C$ –$V$ Technique for MOS Interfaces With Large Time Constant Dispersion
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