Model for the generation of positive charge at the Si-SiO2interface based on hot-hole injection from the anode
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.2099/fulltext
Reference49 articles.
1. High field current induced‐positive charge transients in SiO2
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3. Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling
4. Positive charge effects on the flatband voltage shift during avalanche injection on Al‐SiO2‐Si capacitors
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