Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress
Author:
Affiliation:
1. College of Electrical and Information Engineering, Hunan University, Changsha, China
2. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Company, Ltd, Zhuzhou, China
Funder
National Natural Science Foundation of China
Silicon Carbide (SiC) MOSFET Chip Industrialization Project for New Energy Vehicles
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/4358746/10189109.pdf?arnumber=10189109
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of Monolithically Integrated Temperature Sensors in 4H-SiC JFETs;Key Engineering Materials;2024-08-22
2. Third Quadrant Operation of SiC MOSFETs: Comprehensive Analysis and Condition Monitoring Solution;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05
3. Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients;Solid-State Electronics;2024-05
4. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01
5. Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET;IEEE Transactions on Electron Devices;2023-12
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