Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current Characteristics

Author:

Murakami E.1,Takeshita T.1,Oda K.1,Kobayashi M.2,Asayama K.3,Okamoto M.4

Affiliation:

1. Kyushu Sangyo University,Department of Electrical Engineering,Fukuoka,Japan,813-8503

2. Renesas Engineering Services Co., Ltd.,Tokyo,Japan,187-8588

3. JEOL Ltd.,Tokyo,Japan,196-8558

4. National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba,Japan,305-8569

Publisher

IEEE

Reference28 articles.

1. Fundamentals of Modern VLSI Devices

2. Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

3. CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SIO2;nissan-cohen;Tech Dig 1983 IEEE Int Electron Devices meeting (IEDM),0

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