Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current Characteristics-Reference-Cited by-同舟云学术

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Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current Characteristics

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Murakami E.¹,Takeshita T.¹,Oda K.¹,Kobayashi M.²,Asayama K.³,Okamoto M.⁴

Affiliation:

1. Kyushu Sangyo University,Department of Electrical Engineering,Fukuoka,Japan,813-8503

2. Renesas Engineering Services Co., Ltd.,Tokyo,Japan,187-8588

3. JEOL Ltd.,Tokyo,Japan,196-8558

4. National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba,Japan,305-8569

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117833.pdf?arnumber=10117833

Reference28 articles.

1. Fundamentals of Modern VLSI Devices

2. Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

3. CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SIO2;nissan-cohen;Tech Dig 1983 IEEE Int Electron Devices meeting (IEDM),0

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients;Solid-State Electronics;2024-05

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