Threshold energies of high‐field‐induced hole currents and positive charges in SiO2layers of metal‐oxide‐semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358479
Reference11 articles.
1. Quantum yield of electron impact ionization in silicon
2. Investigation of the SiO2‐induced substrate current in silicon field‐effect transistors
3. SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors
4. Substrate hole current and oxide breakdown
5. Model for the generation of positive charge at the Si-SiO2interface based on hot-hole injection from the anode
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1. Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide;Japanese Journal of Applied Physics;2007-07-13
2. Modeling of time dependence of hole current and prediction of QBD and tBD for thin gate MOS devices based upon anode hole injection;Solid-State Electronics;2001-10
3. Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress;Microelectronic Engineering;2000-05
4. Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress;Solid-State Electronics;1999-09
5. Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation;Solid-State Electronics;1999-03
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