Quantum yield of electron impact ionization in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334804
Reference36 articles.
1. Correlation between substrate and gate currents in MOSFET's
2. Submicrometer MOSFET structure for minimizing hot-carrier generation
3. Hot-electron emission from silicon into silicon dioxide
4. Theory of hot electron emission from silicon into silicon dioxide
5. Hot-Electron Emission From Shallowp−nJunctions is Silicon
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