Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition-Reference-Cited by-同舟云学术

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

Published:2012-04-09 Issue:15 Volume:100 Page:153501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hinkle C. L.,Galatage R. V.,Chapman R. A.,Vogel E. M.,Alshareef H. N.,Freeman C.,Christensen M.,Wimmer E.,Niimi H.,Li-Fatou A.,Shaw J. B.,Chambers J. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3701165

Reference16 articles.

1. Dual high-/spl kappa/ gate dielectric with poly gate electrode: HfSiON on nMOS and Al/sub 2/O/sub 3/ capping layer on pMOS

2. Contributions to the effective work function of platinum on hafnium dioxide

3. Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/

4. Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

5. Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient

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