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Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices

  • Published:2022-05 Issue: Volume:585 Page:152748
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Wang Chun-Yuan,Chou Chun-Yi,Shiue Han-Fang,Chen Hsing-Yang,Ling Chen-Hsiang,Shyue Jing-Jong,Chen Miin-Jang

Funder

Taiwan Semiconductor Manufacturing Company

Taiwan Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference53 articles.

1. Grain-orientation induced work function variation in nanoscale metal-gate transistors—Part I: modeling, analysis, and experimental validation;Dadgour;IEEE Trans. Electron Devices,2010

2. Metal gates for advanced sub-80-nm SOI CMOS technology, in IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207);Cheng;IEEE,2001

3. High-κ/metal gate science and technology;Guha;Annu. Rev. Mater. Res.,2009

4. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology;Yeo;J. Appl. Phys.,2002

5. Dual work function metal gate CMOS technology using metal interdiffusion;Polishchuk;IEEE Electron Device Lett.,2001

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