Effect of Stacked Work Function Metals on Gate Stress Reliability of n- and p-FinFETs
Author:
Affiliation:
1. Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung City, Taiwan
Funder
National Science and Technology Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10175160.pdf?arnumber=10175160
Reference24 articles.
1. Process optimizations for NBTI/PBTI for future replacement metal gate technologies
2. Suppression of corner effects in wide-channel triple-gate bulk FinFETs
3. Metal gate work function tuning by Al incorporation in TiN
4. Tunneling in thin MOS structures
5. Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates
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