Metal gate work function tuning by Al incorporation in TiN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866323
Reference20 articles.
1. Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
2. Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function
3. Dual work function metal gate CMOS technology using metal interdiffusion
4. Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced Ion and nearly defect-free channels
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