Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics-Reference-Cited by-同舟云学术

Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

Published:2008-04-25 Issue:4 Volume:47 Page:2433-2437
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yongxun,Hayashida Tetsuro,Matsukawa Takashi,Endo Kazuhiko,Masahara Meishoku,O'uchi Shinich,Sakamoto Kunihiro,Ishii Kenichi,Tsukada Junichi,Ishikawa Yuki,Yamauchi Hiromi,Ogura Atsushi,Suzuki Eiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference1 articles.

1. Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

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