Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I<inf>on</inf> and nearly defect-free channels-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced Ion and nearly defect-free channels

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
language:
Short-container-title:

Author:

Hsu Shu-Han,Chang Hung-Chih,Chu Chun-Lin,Chen Yen-Ting,Tu Wen-Hsien,Hou Fu Ju,Lo Chih Hung,Sung Po-Jung,Chen Bo-Yuan,Huang Guo-Wei,Luo Guang-Li,Liu C. W.,Hu Chenming,Yang Fu-Liang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479090.pdf?arnumber=6479090

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors;ACS Applied Electronic Materials;2022-06-27

2. Novel vertically stacked Ge0.85Si0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedIon(1.7X atVOV=VDS= 0.5 V) by Ge0.85Si0.15channels;Semiconductor Science and Technology;2020-03-31

3. Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors;Applied Physics Letters;2014-11-03

4. Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors;Applied Physics Letters;2014-05-12

5. Metal gate work function tuning by Al incorporation in TiN;Journal of Applied Physics;2014-02-21

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP