Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors-Reference-Cited by-同舟云学术

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Published:2014-11-03 Issue:18 Volume:105 Page:182106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Brown G. J.¹

Affiliation:

1. Air Force Research Laboratory (AFRL), Dayton, Ohio 45433, USA

Funder

National Science Council Taiwan (NSC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901100

Reference31 articles.

1. Antimonide-based compound semiconductors for electronic devices: A review

2. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

3. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

4. Anomalous Zero-Bias Conductance Peak in a Nb–InSb Nanowire–Nb Hybrid Device

5. Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity;Journal of Applied Physics;2024-08-15

2. Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si;ACS Applied Electronic Materials;2022-01-10

3. Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study;Applied Surface Science;2021-12

4. Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing;Nanotechnology;2021-11-24

5. Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge;ACS Applied Electronic Materials;2021-09-23