Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge-Reference-Cited by-同舟云学术

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Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge

Published:2021-09-23 Issue:10 Volume:3 Page:4484-4489
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Cheng Yi-Ting¹^ORCID,Wan Hsien-Wen¹^ORCID,Chu Tien-Yu¹,Pi Tun-Wen²,Kwo Jueinai³,Hong Minghwei¹

Affiliation:

1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, 10617 Taiwan, ROC

2. National Synchrotron Radiation Research Center, Hsinchu, 30076 Taiwan, ROC

3. Department of Physics, National Tsing Hua University, Hsinchu, 30013 Taiwan, ROC

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00623

Reference33 articles.

1. Toward high-performance and reliable Ge channel devices for 2 nm node and beyond

2. Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application

3. In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures

4. Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

5. Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of the Transition from Triple Bonds to Single Bonds between Ru–Ge Bonding in RuGeO(CO)_n^– (n = 3–5);The Journal of Physical Chemistry Letters;2024-06-28

2. In-situ deposited HfO₂ and Y₂O₃ on epi-Si/p-Ge—a comparative study of the interfacial properties and reliability;Japanese Journal of Applied Physics;2022-03-21

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