Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study-Reference-Cited by-同舟云学术

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Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study

Published:2021-12 Issue: Volume:569 Page:150962
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cheng Yi-Ting,Wan Hsien-Wen,Kwo Jueinai,Hong Minghwei,Pi Tun-Wen

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition;Hong;Appl. Phys. Lett.,2017

2. Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers;Chu;Solid-State Electron.,2010

3. Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors;Chu;Appl. Phys. Lett.,2014

4. Oxidation studies of SiGe;LeGoues;J. Appl. Phys.,1989

5. Effects of Ge concentration on SiGe oxidation behavior;Liou;Appl. Phys. Lett.,1991

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