Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers-Reference-Cited by-同舟云学术

Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers

Published:2010-09 Issue:9 Volume:54 Page:965-971
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chu L.K.,Chu R.L.,Lin T.D.,Lee W.C.,Lin C.A.,Huang M.L.,Lee Y.J.,Kwo J.,Hong M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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3. Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications;Radosavljevic;IEDM Tech Dig,2009

4. Ga2O3(Gd2O3) on Ge without interfacial layers: energy-band parameters and metal oxide semiconductor devices;Chu;Appl Phys Lett,2009

5. FinFET—a self-aligned double-gate MOSFET scalable to 20nm;Hisamoto;IEEE Trans Electron Dev,2000

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