Oxidation studies of SiGe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342945
Reference7 articles.
1. On the oxidation of silicon
2. Probing the transition layer at the SiO2‐Si interface using core level photoemission
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4. Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation
5. Hybridization-induced wide-band bipolaron model for high-Tcsuperconductors
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