Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition-Reference-Cited by-同舟云学术

Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

Published:2017-09-18 Issue:12 Volume:111 Page:123502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hong M.¹²^ORCID,Wan H. W.¹,Lin K. Y.¹,Chang Y. C.¹,Chen M. H.²,Lin Y. H.¹,Lin T. D.¹,Pi T. W.³,Kwo J.⁴^ORCID

Affiliation:

1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan

2. Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan

3. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5003616

Reference33 articles.

1. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

2. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

3. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

4. Capacitance-voltage characterization of GaAs–Al2O3 interfaces

5. Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

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