HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition-Reference-Cited by-同舟云学术

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

Published:2005-04-11 Issue:15 Volume:86 Page:152904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Frank Martin M.,Wilk Glen D.,Starodub Dmitri,Gustafsson Torgny,Garfunkel Eric,Chabal Yves J.,Grazul John,Muller David A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1899745

Reference29 articles.

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2. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

3. The advanced unified defect model for Schottky barrier formation

4. Characterization of Precipitates in Anodic Oxidized Ga1-xAlxAs and Ga1-xInxAs by Laser Raman Spectroscopy

5. Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

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