Interface tailoring for CMOS, cryogenic electronics, and beyond
Author:
Affiliation:
1. Graduate Institute of Appl. Phys., Taiwan Univ.,Dept. of Phys., Natl.,Taipei,Taiwan,10617
2. National Synchrotron Radiation Research Center,Hsinchu,Taiwan,30076
3. National Tsing Hua University,Department of Physics,Hsinchu,Taiwan,30013
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10133934/10133941/10134236.pdf?arnumber=10134236
Reference41 articles.
1. Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission
2. Investigation of Surface Channel InGaAs MOSFETs with Al2O3 and ZrO2 ALD Gate Dielectric
3. Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
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