Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission-Reference-Cited by-同舟云学术

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Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission

Published:2020-07-08 Issue:8 Volume:13 Page:085504
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Cheng Yi-Ting,Wan Hsien-Wen,Cheng Chao-Kai,Cheng Chiu-Ping,Kwo J. Raynien,Hong Minghwei,Pi Tun-Wen

Funder

Ministry of Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab9f62/pdf

Reference32 articles.

1. Challenges and opportunities in advanced Ge pMOSFETs

2. Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 Plasma

3. Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge

4. High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

5. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface tailoring for CMOS, cryogenic electronics, and beyond;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17

2. Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

3. High-Ge-Content Si_1–xGe_x Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability;ACS Applied Electronic Materials;2022-05-28

4. A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations;Nanomaterials;2022-04-11

5. In-situ deposited HfO₂ and Y₂O₃ on epi-Si/p-Ge—a comparative study of the interfacial properties and reliability;Japanese Journal of Applied Physics;2022-03-21

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