Abstract
Amorphous LaxAlyO films were grown on n-type Ge substrate by atomic layer deposition using O3 and H2O as oxidant, respectively. A comparison of the XPS results indicated that a thicker interfacial layer with the component of LaGeOx and GeOx was formed at O3-based LaxAlyO/Ge interface, causing lower band gap value as well as the conduction band offset (CBO) value relative to Ge substrate for O3-based LaxAlyO film, with a concomitant degeneration in the interfacial properties. In contrast, for the H2O-based film, the leakage current of more than one order of magnitude less than that of O3-based LaxAlyO film was obtained. All the results indicated that H2O is a more appropriate oxidant for improving the interfacial properties in the atomic-layer-deposited LaxAlyO dielectric on Ge.
Funder
National Natural Science Foundation of China
Foundation for Fundamental Research of China
Subject
General Materials Science
Cited by
3 articles.
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