High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability-Reference-Cited by-同舟云学术

High-Ge-Content Si_1–xGe_x Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability

Published:2022-05-28 Issue:6 Volume:4 Page:2641-2647
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Wan Hsien-Wen¹^ORCID,Cheng Yi-Ting¹^ORCID,Cheng Chao-Kai¹,Hong Yu-Jie¹,Chu Tien-Yu¹,Chang Mu-Tung²,Hsu Chia-Hung³,Kwo Jueinai⁴,Hong Minghwei¹

Affiliation:

1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan

2. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31057, Taiwan

3. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00062

Reference34 articles.

1. High hole mobility in SiGe alloys for device applications

2. SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

3. 85nm-wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

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