High hole mobility in SiGe alloys for device applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111367
Reference14 articles.
1. p-type Ge-channel MODFETs with high transconductance grown on Si substrates
2. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
3. High electron mobility in modulation‐doped Si/SiGe
4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
5. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
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