Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106246
Reference12 articles.
1. GaAs structures with electron mobility of 5×106cm2/V s
2. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
3. Modulation doping in GexSi1−x/Si strained layer heterostructures
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