Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates-Reference-Cited by-同舟云学术

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Thermal stability of compressively strained Si/relaxed Si 1-x C x heterostructures formed on Ar ion implanted Si (100) substrates

Published:2017-11 Issue: Volume:70 Page:127-132
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Arisawa You,Hoshi Yusuke,Sawano Kentarou,Yamanaka Junji,Arimoto Keisuke,Yamamoto Chiaya,Usami Noritaka

Funder

Grant-in-Aid for Scientific Research

Grant-in-Aid for Challenging Exploratory Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. High-mobility Si and Ge structures

2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

3. The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures

4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy

5. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

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