High-mobility Si and Ge structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference170 articles.
1. Solid‐phase heteroepitaxy of Ge on 〈100〉Si
2. The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers
3. Gallium arsenide and other compound semiconductors on silicon
4. Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed GexSi1−x/Si
5. Necessity of Ga prelayers in GaAs/Ge growth using gas‐source molecular beam epitaxy
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