Solid‐phase heteroepitaxy of Ge on 〈100〉Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92292
Reference10 articles.
1. Calculated and measured efficiencies of thin‐film shallow‐homojunction GaAs solar cells on Ge substrates
2. Heteroepitaxy of deposited amorphous layer by pulsed electron‐beam irradiation
3. Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing
4. Heteroepitaxy of Ge1−xSix on Si by transient heating of Ge‐coated Si substrates
5. Silicon epitaxy by solid‐phase crystallization of deposited amorphous films
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1. Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures;Journal of Applied Physics;2015-09-07
2. Ge Condensation and Its Device Application;Photonics and Electronics with Germanium;2015-05-08
3. The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process;Semiconductor Science and Technology;2006-11-30
4. Germanium thin films on silicon for detection of Near-Infrared light;Handbook of Thin Films;2002
5. High-mobility Si and Ge structures;Semiconductor Science and Technology;1997-12-01
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