Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures
Author:
Affiliation:
1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
2. JSPS Research Fellow, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan
Funder
Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology in Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4929878
Reference27 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects
3. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
4. Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
5. Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6
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1. The effect of Er doping on the crystallization of Ge1−xSnx thin films;Modern Physics Letters B;2021-05-14
2. Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering;Materials Science in Semiconductor Processing;2018-12
3. Influence of the composition fluctuations and decomposition on the tunable direct gap and oscillator strength of Ge1-xSnx alloys;Applied Physics Letters;2016-02-29
4. Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator;ECS Journal of Solid State Science and Technology;2015-12-02
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