Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering-Reference-Cited by-同舟云学术

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Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Published:2018-12 Issue: Volume:88 Page:28-34
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Yisen,Zhang Lu,Huang Zhiwei,Li Cheng,Chen Songyan,Huang Wei,Xu Jianfang,Wang Jianyuan

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. Interband Transitions inSnxGe1−xAlloys

2. Determination of the optical energy gap of Ge1−xSnx alloys with 0

3. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

4. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

5. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing;Applied Surface Science;2024-06

2. The effect of Er doping on the crystallization of Ge1−xSnx thin films;Modern Physics Letters B;2021-05-14

3. High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application;Materials;2019-08-21

4. Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates;Materials;2018-11-12

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