Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy-Reference-Cited by-同舟云学术

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Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

Published:2006-03-31 Issue:12 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

D’Costa Vijay R.,Cook Candi S.,Birdwell A. G.,Littler Chris L.,Canonico Michael,Zollner Stefan,Kouvetakis John,Menéndez José

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.125207/fulltext

Reference96 articles.

1. The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

2. Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates

3. Epitaxial growth of metastable SnGe alloys

4. Molecular beam epitaxy of metastable, diamond structure SnxGe1−xalloys

5. Structural characterization of α‐Sn and α‐Sn1−x Gex alloys grown by molecular beam epitaxy on CdTe and InSb

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4. Compositional dependence of direct transition energies in SixGe1−x−ySny alloys lattice-matched to Ge/GaAs;Journal of Vacuum Science & Technology B;2024-06-12

5. Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films;Materials Science in Semiconductor Processing;2024-06

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