The effect of Er doping on the crystallization of Ge1−xSnx thin films

Abstract

The Er-doped [Formula: see text] thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of [Formula: see text] films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed [Formula: see text] thin films.