Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3521391
Reference16 articles.
1. Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)
2. Proceedings of the Sixth IEEE International Conference on Group IV Photonics;Huo Y.,2009
3. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
4. Strain-induced band gap shrinkage in Ge grown on Si substrate
5. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
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