Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2472273
Reference13 articles.
1. Infrared Absorption of Germanium near the Lattice Edge
2. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
3. Strain-induced band gap shrinkage in Ge grown on Si substrate
4. Tensile strained epitaxial Ge films on Si(100) substrates with potential application inL-band telecommunications
5. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
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