Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Published:2024-06-06 Issue:6 Volume:6 Page:4247-4256
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Bhattacharya Shuvodip¹^ORCID,Johnston Steven W.²,Bodnar Robert J.³,Hudait Mantu K.¹^ORCID

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States

2. National Renewable Energy Laboratory, Golden, Colorado 80401, United States

3. Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, United States

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00347

Reference64 articles.

1. Integrated nanoelectronics for the future

2. Considerations for Ultimate CMOS Scaling

3. Achieving direct band gap in germanium through integration of Sn alloying and external strain

4. Direct-band-gap absorption in germanium under pressure

5. Geiger, R.; Zabel, T.; Marin, E.; Gassenq, A.; Hartmann, J.M.; Widiez, J.; Escalante, J.; Guilloy, K.; Pauc, N.; Rouchon, D. Uniaxially stressed germanium with fundamental direct band gap. arXiv preprint arXiv:1603.03454 2015.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP