Interband Transitions inSnxGe1−xAlloys
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.1937/fulltext
Reference20 articles.
1. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
2. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si
3. Infrared optical properties and band structure of α-Sn/Ge superlattices on Ge substrates
4. Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001)
5. Electronic properties of metastableGexSn1−xalloys
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