Influence of the composition fluctuations and decomposition on the tunable direct gap and oscillator strength of Ge1-xSnx alloys
Author:
Affiliation:
1. Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, São Paulo, Brazil
2. Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, 07743 Jena, Germany
Funder
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4942971
Reference40 articles.
1. Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
2. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
3. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
4. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
5. Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
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