Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing-Reference-Cited by-同舟云学术

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Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

Published:2013-02 Issue: Volume:365 Page:29-34
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Robert,Huang Yi-Chiau,Gupta Suyog,Lin Angie C.,Sanchez Errol,Kim Yihwan,Saraswat Krishna C.,Kamins Theodore I.,Harris James S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy;Chen;Applied Physics Letters,2011

2. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon;Mathews;Applied Physics Letters,2010

3. Suyog Gupta, Robert Chen, Blanka Magyari-Kope, Hai Lin, Bin Yang, Aneesh Nainani, Yoshio Nishi, S. Harris, C. Saraswat, GeSn technology: extending the Ge electronics roadmap, in: Proceedings of the 2011 IEEE Electron Devices Meeting (IEDM), 2011.

4. Genquan Han, Shaojian Su, Chunlei Zhan, Qian Zhou, Yue Yang, Lanxiang Wang, Pengfei Guo, Wang Wei, Choun Pei Wong, Ze Xiang Shen, Buwen Cheng, Yee-Chia Yeo, High-mobility germanium–tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules, in: Proceedings of the 2011 IEEE Electron Devices Meeting (IEDM), 2011.

5. S. Gupta, B. Vincent, B. Yang, H.C. Lin, F. Gencarelli, J.-Y.J. Lin, R. Chen, O. Richard, H. Bender, B. Magyari-Köpe, M. Caymax, J. Dekoster, Y. Nishi, K.C. Saraswat, Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method, in: Proceedings of the IEEE Electron Devices Meeting, 2012.

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2. Effects of ion implantation with arsenic and boron in germanium-tin layers;Journal of Vacuum Science & Technology B;2024-04-09

3. Variation in thermal stability of Ge1−xSnx films for infrared device applications;Journal of Vacuum Science & Technology A;2023-07-10

4. Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS);Applied Physics Letters;2023-02-06

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