Ni-based metallization of GeSn layers: A review and recent advances-Reference-Cited by-同舟云学术

Ni-based metallization of GeSn layers: A review and recent advances

Published:2023-01 Issue: Volume:269 Page:111919
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Quintero Andrea,Gergaud Patrice,Hartmann Jean-Michel,Reboud Vincent,Rodriguez Philippe

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference102 articles.

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2. Y. Yang, S. Su, P. Guo, W. Wang, X. Gong, L. Wang, K.L. Low, G. Zhang, C. Xue, B. Cheng, G. Han, Y.C. Yeo, Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn), in: 2012 IEEE International Electron Devices Meeting (IEDM), 2012, pp. 16.3.1–16.3.4. doi:10.1109/IEDM.2012.6479053.

3. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs;Wirths;Semicond. Sci. Technol.,2015

4. CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes;Talamas Simola;ACS Photonics,2021

5. L. Casiez, M. Bertrand, J. Chrétien, A. Quintero, Q.M. Thai, M. Frauenrath, O. Lartigue, P. Barritault, N. Bernier, Ph. Rodriguez, A. Chelnokov, J.M. Hartmann, N. Pauc, V. Calvo, V. Reboud, GeSn heterostructures LEDs for gas detection, in: 2020 IEEE Photonics Conference (IPC), 2020, pp. 1–2. doi:10.1109/IPC47351.2020.9252514.

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